084) and younger age (P = 0.078) being more likely to have a diagnosis of anxiety disorder was LGX818 purchase revealed No gender differences were found, however, this may be due to the small sample size In conclusion, anxiety disorders are frequent in patients with refractory focal epilepsy, and clinicians should carefully examine their patients with this important comorbidity in mind (C) 2009 Elsevier Inc All rights reserved”
“The electrical characterization of the source and drain extension regions of complementary metal oxide semiconductor (CMOS) transistors

is highlighted in the international technology roadmap for semiconductors (ITRS) as a major challenge for future technology nodes. In practice, there is a clear need for techniques which are simultaneously accurate, nondestructive, fast, local, and highly reproducible. The photomodulated optical reflectance (PMOR) technique has shown to be a very promising candidate to solve this need. However, even though this technique has been widely studied on homogeneous bulk material and on as-implanted (i.e., unannealed) doping profiles, the extension toward active

doping profiles requires a detailed investigation (due to the presence of a built-in electric field). In this paper, after performing an in-depth investigation of the optical and transport models involved in a PMOR experiment, we derive an analytical theory to explain the PMOR signal behavior observed on active doping profiles. In the optical model, we show that only the buy Entrectinib electrorefractive Drude and thermorefractive effects are to be considered for red and near-infrared wavelengths on Si. In the transport model, we begin the discussion BAY 73-4506 manufacturer with the study of homogeneous Si substrates. We show that, due to the high carrier

injection induced by the lasers, the only important effects are, for the free carriers, the Auger recombinations, the (ambipolar) diffusion and the bandgap narrowing-induced quasidrift; the thermoelectric effects being negligible. Based on the results on homogeneous substrates and on the assumption that the quasi-Fermi levels are flat through the space-charge region, we derive an analytical formula for PMOR signals on active doping profiles. We discuss this formula based on experimental PMOR data measured on active doping profiles with a simple boxlike shape. This formula proves to be in good qualitative agreement with the experimental data both when the power of the pump laser is varied (power curves) and when the distance between the lasers is changed (offset curves). We also show that, for the formula to be quantitative, a very good knowledge of the bandgap profile throughout the sample would be required. (C) 2010 American Institute of Physics. [doi:10.1063/1.