At this time, the current mirror that is composed of M5 and M6 de

At this time, the current mirror that is composed of M5 and M6 delivers the programming current to C 1 to increase an amount of stored charge; thereby the state variable becomes larger. On the other hand, when V IN- is greater than V IN+, TG7 is off and both TG5 and TG6 are on. By doing so, we can decrease the amount of charge that is stored at the state variable capacitorC 1. The discharging current path is composed of M7, M8, M9, and M10 in Figure 1. Here V BN and V BP are the biasing voltages for NMOSFETs LXH254 and PMOSFETs, respectively. V BN and V BP are made from the biasing circuit that is shown in Figure 1. D1, D2, and D3 are the diodes that are used in the proposed emulator circuit to limit the minimum value of V C. This minimum value of V C is needed to avoid the dead zone which may be caused by the sub-threshold region of the voltage-controlled resistors M1 and M2. V D means the diode Selleck Alisertib voltage of D1, D2, and D3. V DD is the power supply voltage of the CMOS emulator circuit in Figure 1. One more thing to consider here is that the nonlinearity of memristive

behaviors can be found when the effective width SB273005 cell line of memristor, w(t), in Equation 1 becomes much closer to the boundary constraints [1, 7]. This nonlinearity near the boundary values of w(t) was introduced in the HP model [1] and mathematically modeled by Corinto and Ascoli [7] to describe various nonlinear behaviors of memristors. In terms of implementation, the diode bridge circuit with LCR filter was proposed to reproduce memristive nature with nonlinearity by using a very simple electronic

circuit [8]. In this paper, the window function that is used to define two boundary values of the state variable in the HP model [1] is realized in the CMOS emulator circuit that is shown in Figure 1. The emulator circuit in Figure 1 has two boundary values of the state variable that is defined by V C. Here we can know that the maximum value of V C cannot exceed V DD. And also, V C cannot be lower than V DD-3V D. Thus, the state Urease variable of V C in Figure 1 can exist only between V DD and V DD-3V D, not being higher than V DD and lower than V DD-3V D, respectively. Results and discussion Figure 2a shows the applied input voltage, V IN, to the proposed circuit for emulation of memristive behavior. The voltage waveform is sinusoidal and its frequency and magnitude are 10 kHz and 1.8 V, respectively. The memristor’s current I IN that is emulated by the proposed circuit in Figure 1 is shown in Figure 2b. As the sinusoidal voltage is applied to the emulator circuit in Figure 1, I IN changes with respect to time according to the state variable that is represented by V C, the amount of stored charge at C1. When V C has the lowest value, it means that the state variable is in RESET state, where the emulator circuit acts like a memristor with RESET resistance.

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