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“In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxOy as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La1-xTaxOy films not only show a crystallization temperature higher than 1000 AR-13324 supplier degrees C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band

gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high-k gate insulators.”
“Whole blood culture (C-wb) is a method to evaluate leukocyte response to stimuli. We used C-wb to evaluate the inflammatory response to pathogen associated molecular patterns (PAMPs) in cats. Blood was collected from diluted with RPMI and stimulated with various concentrations of lipopolysaccharide (LPS), lipoteichoic acid (LTA), peptidoglycan (PG) or control (PBS). Multiple concentrations of LPS, LTA and PG significantly stimulated tumor necrosis factor (TNF), interleukin (IL)-1 beta and CXC chemokine ligand (CXCL)-8 in feline C-wb. All PAMPs failed to stimulate IL-6 production and PG failed to stimulate OCCL-8 production. Lipopolysaccharide was a more potent inducer of IL-1 beta and CXCL-8 than LTA or PG and LTA is

a more potent inducer of CXCL-8 than PG. Based on these data, PAMPs from gram positive and negative bacteria induce

TNF, IL-1 beta and check details CXCL-8 production in feline whole blood. Cats appear to be relatively more sensitive learn more to gram negative compared to gram positive bacteria. (c) 2010 Elsevier Ltd. All rights reserved.”
“The effect of pretreatment bias on the nucleation and growth mechanisms of the ultrananocrystalline diamond (UNCD) films on the Si substrate via bias-enhanced nucleation and bias-enhanced growth (BEN-BEG) was investigated using cross-sectional high-resolution transmission electron microscopy, chemical bonding mapping, and Raman spectroscopy. The mirror-polished substrate surface showed the formation of a triangular profile produced by a dominant physical sputtering mechanism induced by ion bombardment of ions from the hydrogen plasma accelerated toward the substrate due to biasing and a potential hydrogen-induced chemical reaction component before synthesizing the UNCD films. The BEN-BEG UNCD films grown on the Si substrate with biased and unbiased pretreatments in the hydrogen plasma were compared. In the case of the bias-pretreated substrate, the SiC phases were formed at the peaks of the Si surface triangular profile due to the active unsaturated Si bond and the enhanced local electrical field. The UNCD grains grew preferentially at the peaks of the triangular substrate surface profile and rapidly covered the amorphous carbon (a-C) and oriented graphite phases formed in the valley of the surface profile.